Laser Diode Tape Cleaver LDTH 100TS
Laser Diode Tape Cleaver LDTH 100TS
Opto System LDTH 100TS laser diode tape cleaver is designed and optimized to cleave pre-scribed GaAs and InP laser diode wafers up to 4 inches.
The machine features our original designed tension stretched tape cleaving method, where the tensioned tape is pushed against the top of the wafer and the ceramic cleaving blade is pushed up from the bottom.
The frame supporting the substrate to be cleaved is placed in the machine. A stretched tape covers the structures from above and hold them in place. The machine vision system automatically recognizes the structures and accurately aligns the wafer to the ceramic cutter that hits the substrate from the bottom.
The combination of the sharp bending force and the tight flexible support of the tape ensure successful propagation of the pre-scribed lines along the crystal planes without creating any adjacent damage .This result in the consistent production mirror-like facets.
The machine features our original designed tension stretched tape cleaving method, where the tensioned tape is pushed against the top of the wafer and the ceramic cleaving blade is pushed up from the bottom.
The frame supporting the substrate to be cleaved is placed in the machine. A stretched tape covers the structures from above and hold them in place. The machine vision system automatically recognizes the structures and accurately aligns the wafer to the ceramic cutter that hits the substrate from the bottom.
The combination of the sharp bending force and the tight flexible support of the tape ensure successful propagation of the pre-scribed lines along the crystal planes without creating any adjacent damage .This result in the consistent production mirror-like facets.
Features
• Full-automatic operation mode• Robust design to process Si and compound semiconductors including GaAs and InP
• High throughput using state of the art Keyence vision system
• Original design tension stretched tape cleaving method
• Cleave Cells into Bars with perfect mirror facets
• Ceramic blade used to cleave the laser bars
• Wafer Size: up to 4” wafers on 6” frames
• TeamViewer remote access
Specification
1. Width: 850 mm 2. Length: 750 mm
3. Height: 1475 mm
4. Weight : 300kg
5. Wafer Size : 4 inches
6. Chip Size : Minimum 200μm
7. Power: AC : 100V 0.5 KVA
8. Speed: Maximum 300mm/sec
9. Resolution: 0.001mm
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